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| MMBTA05 / MMBTA06 MMBTA05 / MMBTA06 NPN Surface mount general purpose Si-epitaxial planar transistors Vielzweck Si-Epitaxial Planar-Transistoren fur die Oberflachenmontage Power dissipation Verlustleistung 1.3 0.1 NPN 250 mW SOT-23 (TO-236) 0.01 g Version 2007-06-25 1.1 2.9 0.1 0.4 3 Type Code 1 2 2.5 max Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae [mm] 1=B 2=E 3=C Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Base current - Basisstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC IB IBM Grenzwerte (TA = 25C) MMBTA05 60 V 60 V 4V 250 mW 1) 500 mA 100 mA 200 mA -55...+150C -55...+150C MMBTA06 80 V 80 V Tj TS Characteristics (Tj = 25C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 60 V IE = 0, VCB = 80 V Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 4 V Collector saturation voltage - Kollektor-Sattigungsspannung ) 2 Kennwerte (Tj = 25C) Typ. - - - - - Max. 100 nA 100 nA 100 nA 250 mV 1.2 V MMBTA05 MMBTA06 ICB0 ICB0 IEB0 VCEsat - - - - - IC = 100 mA, IB = 10 mA Base saturation voltage - Basis-Sattigungsspannung ) 2 IC = 100 mA, IB = 10 mA 1 2 VBEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 MMBTA05 / MMBTA06 Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 100 mA Gain-Bandwidth Product - Transitfrequenz VCE = 2 V, IC = 10 mA, f = 100 MHz Thermal resistance junction - ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung fT RthA 100 MHz - < 420 K/W 1) MMBTA55, MMBTA56 MMBTA05 = 1H MMBTA06 = 1GM - hFE hFE 100 100 - - - - Kennwerte (Tj = 25C) Typ. Max. 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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